Sumitomo Electric Device Innovations U.S.A. Category

CDI Announces Availability of a New GaN 600W S-Band Radar Device from Sumitomo Electric Device Innovations U.S.A.   Sumitomo has released for production their latest and most powerful S-Band Radar device. The SGN2729-600H-R covers the 2.7 to 2.9 GHz S-Band Radar frequencies, and delivers a minimum of 600W of power in pulsed operation. The device operates from a 50V supply rail, and provides 13 dB of gain at P3dB compression. The SGN2729-600H-R is matched to 50 ohms on both input and output, making the design process much easier for engineersRead More
  Visit CDI at IMS 2015 at the Phoenix Convention Center May 17-22 2015, Booth #3041.   CDI will host a live demonstration in our booth of a new high performance 2-stage 10W GaN amplifier device from Sumitomo Electric Device Innovations. CDI custom designed the evaluation board and fixtures for this device, which for the demonstration has been matched to operate between 200 – 1000 MHz. Stop by CDI Booth #3041 to see the demonstration and talk with our experienced RF applications engineering team about your design needs. Live DemonstrationRead More
Component Distributors Inc. (CDI) now supports RF customers in Brazil with products from Sumitomo Electric Device Innovations (SEDI)   Component Distributors, Inc. (CDI), a value added distributor of high performance RF, sensor and power electronic components, is pleased to announce the expansion of its distribution franchise for Sumitomo Electric Device Innovations (SEDI) to now include Brazil. SEDI compound semiconductor products include microwave and millimeterwave RF devices for radar, broadcast and satellite communications. In close collaboration with SEDI’s sales representative, Boreal Communications headquartered in Campinas, CDI can offer the following toRead More
Dear Valued Customer, As one of CDI’s RF & Microwave component customers you may know that CDI is the key RF distributor for Sumitomo Electric Device Innovations, Inc. (formerly Eudyna Devices Inc., and Fujitsu Compound Semiconductor). We would like to introduce you to Sumitomo’s NEW PS series; a very popular GaAs FET device with RF & Microwave product designers. These economical IMFETs are helping to reduce the cost of amplifier designs in C and X bands. The PS series devices come in lower cost plastic packages which can be surface-mounted.Read More
Component Distributors, Inc. (CDI) is pleased to announce that we have expanded our line of Sumitomo Device Innovations USA GaN-HEMT Transistors that now operate up to 180W in power! GaN-HEMT Transistor Advantages Include:         High Efficiency Ease of Matching Broadband Consistency Higher Gain   GaN-HEMT Products: Up To 180W in Power! Part Number Frequency (GHz)   EGNB060M1A 2.7 EGNB090M1A 2.2 EGNB070MK 0.9 EGNB090MK 0.9 EGNB180M1A 0.9   Current GaN-HEMT Products: 10W Up To 45W in Power Part Number Frequency (GHz)   EGNB010MK 3.5 EGNB030MK 2.7 EGNB045MK 2.2Read More