New GaN-HEMT Products Up To 180W In Power

Component Distributors, Inc. (CDI) is pleased to announce that we have expanded our line of Sumitomo Device Innovations USA GaN-HEMT Transistors that now operate up to 180W in power! GaN-HEMT Transistor Advantages Include:         High Efficiency Ease of Matching Broadband Consistency Higher Gain   GaN-HEMT Products: Up To 180W in Power! Part Number Frequency (GHz)   EGNB060M1A 2.7 EGNB090M1A 2.2 EGNB070MK 0.9 EGNB090MK 0.9 EGNB180M1A 0.9   Current GaN-HEMT Products: 10W Up To 45W in Power Part Number Frequency (GHz)   EGNB010MK 3.5 EGNB030MK 2.7 EGNB045MK 2.2 For more information visit CDI online at www.cdiweb.com/SEDI