August 16, 2011 New GaN-HEMT Products Up To 180W In Power Component Distributors, Inc. (CDI) is pleased to announce that we have expanded our line of Sumitomo Device Innovations USA GaN-HEMT Transistors that now operate up to 180W in power! GaN-HEMT Transistor Advantages Include: High Efficiency Ease of Matching Broadband Consistency Higher Gain GaN-HEMT Products: Up To 180W in Power! Part Number Frequency (GHz) EGNB060M1A 2.7 EGNB090M1A 2.2 EGNB070MK 0.9 EGNB090MK 0.9 EGNB180M1A 0.9 Current GaN-HEMT Products: 10W Up To 45W in Power Part Number Frequency (GHz) EGNB010MK 3.5 EGNB030MK 2.7 EGNB045MK 2.2 For more information visit CDI online at www.cdiweb.com/SEDI Post navigation Previous Post MINMAX Technology Introduces ABF 4W Power Module Series Next Post Skyworks Solutions Featured RF Switches Leave a Comment Cancel replyYou must be logged in to post a comment.