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GaN Semiconductors are Enabling New X-band Radars

GaN Semiconductors are Enabling New X-band Radars

Sumitomo Electric Industries, Ltd and its group company Sumitomo Electric Device Innovations USA, Inc., a leading provider of advanced radio frequency (RF), wireless and optical communications solutions, introduce its newest line of high-power gallium nitride (GaN) products for X-Band radar applications.

Next generation X-Band radars face significant size, weight, power, and cost (SWAP-C) challenges. The RF power amplifier in such a system is a significant driver of all four aspects of this challenge. Sumitomo Electric has developed a line of high power GaN X-Band devices that enable RF solid-state power amplifiers to meet the SWAP-C challenges of these new radars while also improving reliability versus tube amplifiers. GaN provides very high power and bandwidth that improves performance and is a proven and reliable technology for radar applications.

Sumitomo Electric is Introducing Five New X-Band GaN Devices
  SGC8595-300B-R SGC0910-300B-R SGC1011-300B-R SGM6906VU SGM6901VU
Freq. (GHz) 8.5-9.5 9.0-10.0 9.8 – 10.5 9.2-9.5 8.5-10.1
Power (W) 270W <= 9.17GHz
235W >9.17GHz
270W <= 9.6GHz
235W >9.6GHz
250W <= 10.3GHz
220W >10.3GHz
43.7W 24W<= 10.1GHz
21.4W >10.1GHz
Gain (dB) 8.3dB <=9.17GHz
7.7dB >9.17GHz
8.3dB <=9.6GHz
7.7dB >9.6GHz
8.0dB <=10.3GHz
7.4dB >10.3GHz
21.4dB 23.3dB
Efficiency 38% 38% 37% 37% 38%
Package Hermetic
Flange Mount
Flange Mount
Flange Mount
Sealed SMT
Hermetically Sealed
Click Here to Download the Press Release (pdf)
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About Sumitomo Electric Device Innovations USA
Sumitomo Electric Device Innovations USA is the US division of Sumitomo Electric Devices (Japan). Sumitomo is one of the world’s largest providers of Gallium Nitride (GaN) devices for RF applications. Sumitomo GaN devices are used in communication infrastructure, RADAR systems, satellite communications, point-to-point radios, and other applications.
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